Four SiC products have been included in the State Councils list

China Electronics Technology Group Corporation:

6&8 inch silicon carbide substrate

China Electronics Technology Group's "6-8 inch silicon carbide single crystal substrate and epitaxial materials" have been selected for the 2024 edition of the State Council's "Achievement Handbook". It is reported that its products are mainly aimed at the preparation needs of high-temperature, high-frequency, high-power, and high-voltage devices. According to the manual, the resistivity of its 6-inch semi insulating substrate is not less than 1 × 10 ¹⁰Ω· cm, the micro tube density of the 6-inch N-type substrate is less than 0.05 cm ⁻ ², and the micro tube density of the 8-inch substrate is less than 0.5 cm ⁻ ². The uniformity of the epitaxial layer concentration is better than 5%.

At present, its 6-inch products have achieved mass supply, and 8-inch products have also been verified by domestic and foreign head chip manufacturers and downstream enterprises, and have been stably supplied to some enterprises.

In addition, China Electronics Technology Group has already included 1200V SiC diodes and SiC MOSFET series products in the 2022 catalog. Among them, the 1200V SiC diode series products have a reverse breakdown voltage of 1200V, a forward voltage drop of 1.51V, and a forward current coverage of 5A/10A/20A. They have the advantages of fast switching speed, low loss, and high temperature resistance, and have been widely used in new generation power electronic systems such as charging pile power modules.

At the same time, its WM1A080120L1 SiC MOSFET has a specific on resistance of 3.8 m Ω· cm ², a driving voltage of 15-20V, and a leakage source withstand voltage of 1200V. It has been widely used in new energy vehicle on-board chargers.

Dongfeng Motor Corporation:

Silicon carbide electric drive

The "iD4-200 Electric Drive" led by Zhixin Technology, a subsidiary of Dongfeng Motor, has been selected for the 2024 edition of the State Council's "Achievement Manual". It is reported that the electric drive integrates an efficient slot oil cooled flat wire motor, an intelligent controller with independent SiC power module, and an ultra quiet wide spoke shaft tooth structure, which has the characteristics of high power density, high efficiency, and low noise. The maximum speed of the electric drive motor is 20000 revolutions per minute, the maximum efficiency of the system is 95.4%, the peak power can be extended to 260 kW, and the power density reaches 3.25 kW/kg.

Based on the iD4-200 platform, 5 electric drive assemblies have been developed, with a component commonality rate of 89%, which can meet the demand of mainstream car models in the market. Among them, the iD4-200H model has been successfully installed in models such as Lantu Zhiyin.

In the 2022 edition of the catalog, Dongfeng Motor's automotive grade wide bandgap semiconductor IGBT module was also included in the catalog. This module has an independent withstand voltage capability of 750V, a current density of 250 A/cm ², and a maximum operating temperature exceeding 175 ℃. It has low loss characteristics and can be widely used in the fields of new energy and motor drives.

Changan Automobile:

Silicon carbide electric drive

The "Nine in One" high-pressure oil cooled silicon carbide electric drive system for passenger cars developed by Deep Blue Automobile has been selected for the 2024 edition of the State Council's "Achievement Manual".

It is reported that the electric drive has outstanding performance indicators: the highest system efficiency exceeds 95.7%, the CLTC operating efficiency exceeds 92.59%, the power density reaches 2.45 kW/kg, and the peak torque exceeds 4200 N · m. In addition, its upper level control software meets the ASIL C functional safety level and is compatible with DC charging piles of mainstream voltage levels in the market.

At present, the system has achieved mass production and has been applied to multiple models such as Changan Qiyuan E07, Avita 07, Avita 06, etc.

Zhengzhou Abrasive and Grinding Research Institute:

SiC wafer processing tools

In response to the difficulties in processing silicon carbide wafers, Zhengzhou Abrasives and Grinding Research Institute has developed a series of silicon carbide wafer processing tools, including thinning grinding wheels, precision chamfering wheels, and grinding and polishing fluids. The processing efficiency of this series of products has increased by more than 30% compared to similar products, with a single feed rate of 0.8 μ m/s for the thinning grinding wheel, a single groove life deviation of less than 5% for the reverse edge grinding wheel, and a polishing efficiency of 0.8-1.0 μ m/h for the grinding and polishing solution. While improving performance, the product price has been reduced by more than 50%, and it has been widely promoted and applied in domestic semiconductor manufacturing enterprises.

Jita Semiconductor:

600-1700V automotive grade IGBT process platform

The "600-1700V automotive grade IGBT process platform" developed by Jita Semiconductor has been selected for the 2024 edition of the State Council's "Achievement Manual". It is reported that the platform has high-performance automotive process capabilities such as high-density grooves (groove density of 1.2 μ m) and high-energy hydrogen injection field termination, and has passed the automotive grade IATF 16949 system certification. The cumulative shipment volume of this platform has reached 670000 pieces and has been applied to mainstream domestic new energy vehicle manufacturers such as BYD.

In addition to the above-mentioned enterprises, in recent years, several companies' silicon carbide products have also appeared in the State Council catalog, including:

In the 2023 catalog, SiC MOSFET devices and SiC JBS devices from China Resources Microelectronics were selected. The on resistance of its SiC MOSFET product platform is less than 90 m Ω, the breakdown voltage is less than 1200V, the current capacity is up to 30A, and the device reliability is significantly improved. The fourth generation G2 SiC JBS platform not only reduces the typical Vf value by 10%, but also reduces the chip area by 20% compared to the previous generation. The product has passed the reliability testing of automotive specifications.

In the 2022 catalog, the 3300V/750A SiC power module from CRRC Times was selected. This module adopts independent SiC MOS and SBD chips, which have the advantages of low stray inductance, fast switching speed, and high operating junction temperature. It is suitable for the new generation traction inverter platform of rail transit and is steadily being pushed towards large-scale application.